213 research outputs found

    Simple parallel stream to serial stream converter for Active Pixel Sensor readout

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    This paper describes a new electronics module for converting a parallel data flow to a serial stream in the USB 2.0 High Speed protocol. The system provides a connection between a PC USB port and a parallel interface of the DAQ board, which is used for investigation of performance of Active Pixel Sensors (APS) prototypes. The DAQ readout software supports Win XX OS and Linux OS. GUI examples have been prepared in the Lab Windows and Lab View environments. The module that was designed using virtual peripheral concept can be easily adapted for many similar tasks

    A fast monolithic active pixel sensor with pixel level reset noise suppression and binary outputs for charged particle detection

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    In order to develop precision vertex detectors for the future linear collider, fast active monolithic active pixel sensors are studied. Standard CMOS 0.25 mum digital process is used to design a test chip which includes different pixel types, column-level discriminators and a digital control part. In-pixel amplification is implemented together with double sampling. Different charge-to-voltage conversion factors were obtained using amplifiers with different gains or diode sizes. Pixel architectures with DC and AC coupling to charge sensing element were proposed. As far, hits from conversion of 35Fe photons were registered for the DC-coupled pixel. Double sampling is functional and allows almost a complete cancellation if fixed pattern noise

    Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

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    CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mra

    Optimization of Tracking Performance of CMOS Monolithic Active Pixel Sensors

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    CMOS Monolithic Active Pixel Sensors (MAPS) provide an attractive solution for high precision tracking of minimum ionizing particles. In these devices, a thin, moderately doped, undepleted silicon layer is used as the active detector volume with the readout electronics implemented on top of it. Recently, a new MAPS prototype was fabricated using the AMS 0.35 mumum OPTO process, featuring a thick epitaxial layer. A systematic study of tracking performance of that prototype using high-energy particle beam is presented in this work. Noise performance, signal amplitude from minimum ionizing particles, detection efficiency, spurious hit suppression and spatial resolution are shown as a function of the readout pitch and the charge collecting diode size. A test array with a novel readout circuitry was also fabricated and tested. Each pixel circuit consists of a front-end voltage amplifier, capacitively coupled to the charge collecting diode, followed by two analog memory cells. This architecture implements an on-pixel correlated double sampling method, allowing for optimization of integration independently of full frame readout time and strongly reduces the pixel-to-pixel output signal dispersion. First measurements using this structure are also presented

    A vertex detector for the International Linear Collider based on CMOS sensors

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    The physics programme at the International Linear Collider (ILC) calls for a vertex detector (VD) providing unprecedented flavour tagging performances, especially for c-quarks and τ leptons. This requirement makes a very granular, thin and multi-layer VD installed very close to the interaction region mandatory. Additional constraints, mainly on read-out speed and radiation tolerance, originate from the beam background, which governs the occupancy and the radiation level the detector should be able to cope with. CMOS sensors are being developed to fulfil these requirements. This report addresses the ILC requirements (highly related to beamstrahlung), the main advantages and features of CMOS sensors, the demonstrated performances and the specific aspects of a VD based on this technology. The status of the main R&D directions (radiation tolerance, thinning procedure and read-out speed) are also presented

    Isolation of Flow and Nonflow Correlations by Two- and Four-Particle Cumulant Measurements of Azimuthal Harmonics in sNN=\sqrt{s_{_{\rm NN}}} = 200 GeV Au+Au Collisions

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    A data-driven method was applied to measurements of Au+Au collisions at sNN=\sqrt{s_{_{\rm NN}}} = 200 GeV made with the STAR detector at RHIC to isolate pseudorapidity distance Δη\Delta\eta-dependent and Δη\Delta\eta-independent correlations by using two- and four-particle azimuthal cumulant measurements. We identified a component of the correlation that is Δη\Delta\eta-independent, which is likely dominated by anisotropic flow and flow fluctuations. It was also found to be independent of η\eta within the measured range of pseudorapidity η<1|\eta|<1. The relative flow fluctuation was found to be 34%±2%(stat.)±3%(sys.)34\% \pm 2\% (stat.) \pm 3\% (sys.) for particles of transverse momentum pTp_{T} less than 22 GeV/cc. The Δη\Delta\eta-dependent part may be attributed to nonflow correlations, and is found to be 5%±2%(sys.)5\% \pm 2\% (sys.) relative to the flow of the measured second harmonic cumulant at Δη>0.7|\Delta\eta| > 0.7

    Charged-to-neutral correlation at forward rapidity in Au+Au collisions at sNN\sqrt{s_{NN}}=200 GeV

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    Event-by-event fluctuations of the ratio of inclusive charged to photon multiplicities at forward rapidity in Au+Au collision at sNN\sqrt{s_{NN}}=200 GeV have been studied. Dominant contribution to such fluctuations is expected to come from correlated production of charged and neutral pions. We search for evidences of dynamical fluctuations of different physical origins. Observables constructed out of moments of multiplicities are used as measures of fluctuations. Mixed events and model calculations are used as baselines. Results are compared to the dynamical net-charge fluctuations measured in the same acceptance. A non-zero statistically significant signal of dynamical fluctuations is observed in excess to the model prediction when charged particles and photons are measured in the same acceptance. We find that, unlike dynamical net-charge fluctuation, charge-neutral fluctuation is not dominated by correlation due to particle decay. Results are compared to the expectations based on the generic production mechanism of pions due to isospin symmetry, for which no significant (<1%) deviation is observed.Comment: 14 pages, 6 figure
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